BSIM3_Model:BSIM3 MOSFET Model
The SPICE BSIM3 MOSFET model is translated to the ADS MOSFET BSIM3_Model. For translation information on the MOSFET device, refer to MOSFET Device.
For more information on the ADS model, place the model in a schematic and choose Edit > Component > Edit Component Parameters to view the model parameters. You can also click Help in the component editor dialog box for additional information.
Example SPICE Command Line:
.model nch nmos level=7 rg=0 rsh=0 ...
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SPICE Dialect and Netlist Syntax:
Spice2/3:
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Does not exist
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PSpice:
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.model mname NMOS | PMOS LEVEL=7 [param=value]*
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HSpice:
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.model mname NMOS | PMOS LEVEL=49 [param=value]*
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ADS Netlist Syntax:
model mname MOSFET NMOS=[0|1] PMOS=[0|1] Idsmod=8 [param=value]*
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ADS Schematic Symbol:
Model Parameters:
For information on parameter format, refer to Using Parameter Mapping Tables to Understand a Translation.
Table 8-19. BSIM3_Model Parameters
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Idsmod
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8
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Level=7
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Level=49, 53
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Version
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3.1
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x
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x
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Mobmod
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1
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x
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x
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Capmod
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1
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Def=2
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3
Level 53 def=3
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Noimod
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1
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x
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x
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B3qmod
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0
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-
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See comments
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Paramchk
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0
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x
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x
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Binunit
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1
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x
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x
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Rg
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ohms
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0
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x
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-
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Rsh
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ohms/sq
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0.0
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x
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x
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Nj
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1.0
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x
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N
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Xti
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3.0
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-
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x
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Js
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A/m2
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1e-4
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x
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Def=0
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Jsw
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A/m2
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0.0
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x
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x
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Lint
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m
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0.0
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x
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x
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Ll
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mLln
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0.0
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x
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x
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Lln
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1.0
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x
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x
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Lw
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mLwn
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0.0
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x
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x
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Lwn
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1.0
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x
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x
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Lwl
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m(Lwn+Lln)
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0.0
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x
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x
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Wint
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m
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0.0
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x
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x
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Wl
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mWln
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0.0
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x
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x
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Wln
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1.0
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x
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x
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Ww
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mWwn
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0.0
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x
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x
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Wwn
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1.0
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x
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x
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Wwl
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m(Wwn+Wln)
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0.0
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x
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x
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Tnom
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°C
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25
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Def=27
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-
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Tox
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m
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1.5e-8
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x
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x
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Toxm
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m
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Tox
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-
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x
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Cj
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F/m2
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5e-4
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x
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Def=5.79e-4
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Mj
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0.5
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x
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x
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Cjsw
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F/m
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5.0e-10
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x
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Def=0
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Mjsw
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0.33
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x
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x
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Pb
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V
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1.0
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x
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PHIB
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Pbsw
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V
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1.0
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x
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x
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Xt (L,W,P)
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m
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1.55e-7
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x
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x
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Vbm (L,W,P)
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V
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-5
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Def=-3.0
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Def=-3
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Vbx (L,W,P)
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V
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x
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x
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Vfbcv (L,W,P)
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V
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-1
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x
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x
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Vfb (L,W,P)
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V
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calculated
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-
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x
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Xj (L,W,P)
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m
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0
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x
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Def=1.5e-7
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Dwg (L,W,P)
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m/V
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0.0
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x
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x
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Dwb (L,W,P)
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m/V(1/2)
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0.0
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x
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x
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Nch (L,W,P)
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1/cm3
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1.7e17
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-
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x
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Nsub (L,W,P)
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1/cm3
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6.0e16
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-
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x
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Ngate (L,W,P)
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1/cm3
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x
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x
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Gamma1 (L,W,P)
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V(1/2)
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x
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x
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Gamma2 (L,W,P)
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V(1/2)
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x
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x
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Alpha0 (L,W,P)
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m/V
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0.0
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x
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x
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Alpha1 (L,W,P)
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1/V
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0.0
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-
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x
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Acde (L,W,P)
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m/V
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1.0
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-
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x
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Moin (L,W,P)
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m/V
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15
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-
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x
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Tpb
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V/K
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0.0
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-
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x
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Tpbsw
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V/K
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0.0
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-
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x
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Tpbswg
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V/K
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0.0
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-
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x
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Tcj
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V/K
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0.0
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-
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x
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Tcjsw
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V/K
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0.0
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-
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x
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Tcjswg
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V/K
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0.0
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-
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x
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Llc
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LI
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-
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x
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Lwc
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Lw
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-
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x
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Lwlc
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Lwl
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-
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x
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Wlc
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Wl
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-
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x
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Wwc
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Ww
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-
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x
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Wwlc
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Wwl
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-
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x
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Elm (L,W,P)
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5.0
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x
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x
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Beta0 (L,W,P)
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V
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30.0
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x
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x
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Vth0 (L,W,P)
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V
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NMOS=0.7
PMOS=-0.7
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0.7
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K1 (L,W,P)
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V(1/2)
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x
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0.50
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K2 (L,W,P)
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x
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0.0186
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K3 (L,W,P)
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80.0
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x
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x
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K3b (L,W,P)
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1/V
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0.0
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x
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x
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W0 (L,W,P)
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m
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2.5e-6
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-
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x
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Nlx (L,W,P)
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m
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1.74e-7
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x
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x
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Dvt0 (L,W,P)
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2.2
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x
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x
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Dvt1 (L,W,P)
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0.53
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x
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x
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Dvt2 (L,W,P)
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1/V
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-0.032
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x
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-
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Dvt0w (L,W,P)
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1/m
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0.0
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x
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x
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Dvt1w (L,W,P)
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1/m
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5.3e6
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x
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x
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Dvt2w (L,W,P)
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1/V
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-0.032
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x
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x
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Cgso
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F/m
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0
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x
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2.07188e-10
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Cgdo
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F/m
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0
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x
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2.07188e-10
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Cgbo
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F/m
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0.0
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x
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x
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Xpart
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0.0
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x
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1
Level 53 def=0
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Drout (L,W,P)
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0.56
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x
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x
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Dsub (L,W,P)
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Drout
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x
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x
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Ua (L,W,P)
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m/V
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2.25e-9
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x
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x
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Ua1 (L,W,P)
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m/V
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4.31e-9
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x
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x
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Ub (L,W,P)
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(m/V)2
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5.87e-19
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x
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x
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Ub1 (L,W,P)
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(m/V)2
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-7.61e-18
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x
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x
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Uc (L,W,P)
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m/V2
1/V
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-0.0456
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x
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-4.56e-11
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Uc1 (L,W,P)
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m/V2
1/V
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-0.056
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x
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-5.69e-11
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U0 (L,W,P)
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cm2/Vs
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670.0 NMOS
250.0 PMOS
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x
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x
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Ute (L,W,P)
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-1.5
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x
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x
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Rdsw (L,W,P)
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ohms   mWr
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0.0
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x
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x
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Prwg (L,W,P)
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1/V
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0.0
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x
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x
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Prwb (L,W,P)
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1/V
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0.0
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x
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x
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Wr (L,W,P)
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1.0
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-
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x
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Prt (L,W,P)
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ohms m
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0.0
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x
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x
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Vsat (L,W,P)
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m/s
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8.0e4
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x
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x
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At (L,W,P)
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m/s
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3.3e4
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x
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x
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A0 (L,W,P)
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1.0
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x
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x
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Keta (L,W,P)
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1/V
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-0.047
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x
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x
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Ags (L,W,P)
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1/V
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0.0
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x
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x
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A1 (L,W,P)
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1/V
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0.0
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x
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x
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A2 (L,W,P)
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1.0
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x
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x
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B0 (L,W,P)
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m
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0.0
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x
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x
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B1 (L,W,P)
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m
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0.0
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x
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x
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Voff (L,W,P)
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V
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-0.08
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x
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x
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Voffcv (L,W,P)
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0.0
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-
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x
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Noff (L,W,P)
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1.0
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-
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x
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Nfactor (L,W,P)
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|
1.0
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x
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x
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Ijth
|
A
|
.1
|
-
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x
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Cdsc (L,W,P)
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F/m2
|
2.4e-4
|
x
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x
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Cdscb (L,W,P)
|
F/V/m2
|
0.0
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x
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x
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Cdscd (L,W,P)
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F/V/m2
|
0.0
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x
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x
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Cit (L,W,P)
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F/m2
|
0.0
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x
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x
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Eta0 (L,W,P)
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|
0.08
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x
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x
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Etab (L,W,P)
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1/V
|
-0.07
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x
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x
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Pclm (L,W,P)
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|
1.3
|
-
|
x
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Pdiblc1 (L,W,P)
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|
0.39
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x
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x
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Pdiblc2 (L,W,P)
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|
0.0086
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x
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x
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Pdiblcb (L,W,P)
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1/V
|
0
|
x
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x
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Pscbe1 (L,W,P)
|
V/m
|
4.24e8
|
x
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x
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Pscbe2 (L,W,P)
|
V/m
|
1e-5
|
x
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x
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Pvag (L,W,P)
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|
0.0
|
x
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x
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Delta (L,W,P)
|
V
|
0
|
x
|
0.01
|
Kt1 (L,W,P)
|
V
|
-0.11
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x
|
0.0
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Kt1l (L,W,P)
|
m-V
|
0.0
|
x
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x
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Kt2 (L,W,P)
|
|
0.022
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x
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x
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Cgsl (L,W,P)
|
F/m
|
0.0
|
x
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x
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Cgdl (L,W,P)
|
F/m
|
0.0
|
-
|
x
|
Ckappa (L,W,P)
|
F/m
|
0.6
|
x
|
x
|
Cf (L,W,P)
|
F/m
|
calculated
|
x
|
x
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Clc (L,W,P)
|
m
|
0.1e-6
|
x
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x
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Cle (L,W,P)
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|
0.6
|
x
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x
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Dlc
|
m
|
Lint
|
x
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x
|
Dwc
|
m
|
Wint
|
x
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x
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Kf
|
|
0.0
|
x
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x
|
Af
|
|
1.0
|
x
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x
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Ef
|
|
1.0
|
x
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x
|
Em
|
V/m
|
4.1e-7
|
x
|
4.1e+7
|
Noia
|
|
1.0e20 NMOS
9.9e18 PMOS
|
x
|
x
|
Noib
|
|
5.0e4 NMOS
2.4e3 PMOS
|
x
|
x
|
Noic
|
|
-1.4e-12 NMOS
1.4e-12 PMOS
|
x
|
x
|
Acm
|
|
10
|
-
|
x
|
Calcacm
|
|
0
|
-
|
x
|
Hdif
|
m
|
0
|
-
|
x
|
Ldif
|
m
|
0
|
-
|
x
|
Wmlt
|
|
1
|
-
|
x
|
Xw
|
m
|
0
|
-
|
x
|
Xl
|
m
|
0
|
-
|
x
|
Rdc
|
Ohms
|
0
|
-
|
x
|
Rsc
|
Ohms
|
0
|
-
|
x
|
Cjswg
|
F/m
|
Cjsw
|
-
|
CJGATE
|
Pbswg
|
V
|
Mjsw
|
-
|
PHP
|
Mjswg
|
|
1/3
|
-
|
.33
|
Is
|
A
|
1e-14
|
-
|
x
|
Rd
|
Ohms
|
0
|
-
|
x
|
Rs
|
Ohms
|
0
|
-
|
x
|
Tlev
|
|
0
|
-
|
x
|
Tlevc
|
|
0
|
-
|
x
|
Eg
|
eV
|
1.16
|
-
|
x
|
Gap1
|
V/°C
|
7.04e-4
|
-
|
x
|
Gap2
|
K
|
1108
|
-
|
x
|
Cta
|
1/°C
|
0
|
-
|
x
|
Ctp
|
1/°C
|
0
|
-
|
x
|
Pta
|
1/°C
|
0
|
-
|
x
|
Ptp
|
1/°C
|
0
|
-
|
x
|
Trd
|
1/°C
|
0
|
-
|
x
|
Trs
|
1/°C
|
0
|
-
|
x
|
Nqsmod
|
|
0
|
-
|
x
|
Nlev
|
|
-1
|
-
|
x
|
Gdsnoi
|
|
|
-
|
x
|
Vfbflag
|
|
0
|
-
|
x
|
Comments:
The binning parameters Wmin, Wmax, Lmin and Lmax have been added to the model. They are not used by the simulator; they are supported solely for making models self-documenting. To perform binning, the ADS BinModel must be used. The translator automatically sets up the BinModel and moves these parameters to that BinModel. Therefore, the translator does not set these parameters on the BSIM3 model, just the BinModel.
Hspice only: If Level=49 and Capmod=0, the translator sets B3qmod=1 to turn on a special Hspice compatibility mode. Otherwise, the default value of B3qmod=0.
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