## MTEE (Microstrip T-Junction)

##### Symbol

##### Illustration

##### Available in ADS and RFDE

##### Parameters

Name |
Description |
Units |
Default |
---|---|---|---|

Subst | Microstrip substrate name | ||

W1 | Conductor width at pin 1 | mil | |

W2 | Conductor width at pin 2 | mil | |

W3 | Conductor width at pin 3 | mil | |

Temp | Physical temperature | °C |

##### Range of Usage

0.05 × H ≤ W1 ≤ 10 × H

0.05 × H ≤ W2 ≤ 10 × H

0.05 × H ≤ W3 ≤ 10 × H

Er ≤ 20

Wlargest/Wsmallest ≤ 5

where

Wlargest, Wsmallest are the largest, smallest width among W2, W2, W3

f(GHz) × H (mm) ≤ 0.4 × Z0

where

Z0 is the characteristic impedance of the line with Wlargest

##### Notes/Equations

- The frequency-domain model is an empirically based, analytical model. The model modifies E. Hammerstad model formula to calculate the Tee junction discontinuity at the location defined in the reference for wide range validity. A reference plan shift is added to each of the ports to make the reference planes consistent with the layout.
- The center lines of the strips connected to pins 1 and 2 are assumed to be aligned.
- For time-domain analysis, an impulse response obtained from the frequency-domain analytical model is used.
- The "Temp" parameter is only used in noise calculations.
- For noise to be generated, the transmission line must be lossy (loss generates thermal noise).

##### References

- E. Hammerstad, "Computer-Aided Design of Microstrip Couplers Using Accurate Discontinuity Models,"
*MTT Symposium Digest,*1981.

##### Equivalent Circuit

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