SP_BJT (S-Parameters vs. Bias for BJT)

Symbol

Parameters

IBB_start = initial base current, in uA
IBB_stop = last base current, in uA
IBB_points = number of base current values
VCE_start = initial collector emitter voltage
VCE_stop = last collector emitter voltage
VCE_points = number of collector-emitter values
AnalysisFreq = Single S-parameter analysis frequency, in GHz
Port1Z = port 1 port impedance (complex)
Port2Z = port 2 port impedance (complex)

Notes

1. A template using this item can be accessed by selecting Insert > Template > SP_BJT_T from the Schematic window.
2. SP_BJT sets up an S-parameter analysis at one frequency with swept current and swept voltage for the base and collector biases, respectively. This component helps select an operating point for desired gain. Connect it to a bipolar junction transistor, as indicated in the schematic symbol.
3. This is a simulation component. No other simulation or control components are needed.