MOS Model9 Process-Philips MOS Model 9 (Process Based)

MOS_Model9_Process: Philips MOS Model 9 (Process Based)

The SPICE MOS9 and Spectre mos902 model are translated to the ADS MOSFET MOS_Model9_Process. For translation information on the MOSFET device, refer to MOSFET Device.

For more information on the ADS model, place the model in a schematic and choose Edit > Component > Edit Component Parameters to view the model parameters. You can also click Help in the component editor dialog box for additional information.

Example SPICE Command Line:

.model nch nmos level=50 ler=1e-6 wer=10e-6 ...

Example Spectre Command Line:

model mos9pch mos902 ler=0.93e-6 wer=20e-6 ...

SPICE and Spectre Dialect and Netlist Syntax:

Spice2/3:	Not available
PSpice:	Not available
HSpice:	.model mname NMOS\|PMOS LEVEL=50 [param= value]*
Spectre	model mname mos902 type=[p\|n] [param= value]*

ADS Netlist Syntax:

model mname MOSFET NMOS=[0|1] PMOS=[0|1] Type=2 [param= value]*

ADS Schematic Symbol:

Model Parameters:

All parameter names for this model are the same between HSpice and ADS except for the addition of Type=2 to indicate the process level model. However, while the parameter names are the same, most default values are different. Additionally, HSpice supports different default values between the NMOS and PMOS implementations.

The ADS defaults are from an earlier version of the Phillips model. This should not affect the translation because the translator will fill in the proper HSpice defaults. Consult your HSpice manual for the HSpice defaults if needed. All defaults supplied by the translator are from HSpice V99.2.

For information on parameter format, refer to Using Parameter Mapping Tables to Understand a Translation.

ADS	Default	Unit	Spectre
NMOS ^†	yes		type n
PMOS	no		type n
Type	2
Ler	1e−4	m	ler 2.5e−6 m
Wer	1e−4	m	wer 25e−6 m
Lvar	0.0	m	lvar 0.3e−6 m
Lap	0.0	m	lap 0.1e−6 m
Wvar	0.0	m	wvar 3e−6 m
Wot	0.0	m	wot 1e−6 m
Tr	300.15	°C	tr set by option °C tref
Vtor	0.87505	V	vtor 0.8 V
Stvto	0.0	V/K	stvto 0.01 V/K
Slvto	0.0	V×m	slvto 0.5e−6 V×m
Sl2vto	0.0	V×m ²	x
Swvto	0.0	V×m	swvto 5e−6 V×m
Kor	0.74368	√V	kor 0.5 V
Slko	0.0	√(V×m)	slko 1e−6 V×m
Swko	0.0	√V	swko 10e−6 V×m
Kr	0.55237	√V	kr 0.1 V
Slk	0.0	√(V×m)	slk 0.5e−6 V×m
Swk	0.0	√(V×m)	swk 5e−6 V×m
Phibr	0.65	V	x
Vsbxr	0.63304	V	vsbxr 0.9 V
Slvsbx	0.0	V×m	slvsbx 0.5e−6 V×m
Swvsbx	0.0	V×m	swvsbx 5e−6 V×m
Betaq	0.12069 e−3	A/V ²	betaq 0.1e−3 A/V ²
Etabet	0.0		etabet 0.5
Thelr	0.99507 e−1	1/V	thelr 0.05 1/V
Stthelr	0.0	1/(V×K)	stthelr 3e−3 1/(V×K)
Slthe1r	0.0	m/V	slthelr 50e−9 m/V
Stlthe1	0.0	m/(V×K)	stlthel 5e−9 m/(V×K)
Swthe1	0.0	m/V	swthe1 1e−6 m/V
Wdog	0.0	m	x
Fthe1	0.0		x
The2r	0.43225 e−1	√V	the2r 17e−3 1/V
Stthe2r	0.0	√(V/K)	stthe2r 0.1e−3 1/(V×K)
Slthe2r	0.0	m/√V	slthe2r 5e−9 m/V
Stlthe2	0.0	m/√(V/K)	stlthe2 0.5e−9 m/(V×K)
Swthe2	0.0	m/√V	swthe2 0.1e−6 m/V
The3r	0.0	1/V	the3r 37e−3 1/V
Stthe3r	0.0	1/V/K	stthe3r 0.1e−3 1/(V×K)
Slthe3r	0.0	m/V	slthe3r 5e−9 m/V
Stlthe3	0.0	m/V/K m/(V×K)?	stlthe3 0.5e−9 m/(V×K)
Swthe3	0.0	m/V	swthe3 0.1e−6 m/V
Gam1r	0.38096 e−2	V ^(1-Etads)	gam1r 40e−3 V ^(1-etads)
Slgam1	0.0	V ^(1-Etads) ×m	slgam1 0.1e−6 V ^(1-etads) ×m
Swgam1	0.0	V ^(1-Etads) ×m	swgam1 1e−6 V ^(1-etads) ×m
Etadsr	0.6		x
Alpr	0.1e−1		alpr 4e−3
Etaalp	0.0		etaalp 0.5
Slalp	0.0	m ^(Etaalp)	slalp 0.14e−3 m ^(etaalp)
Swalp	0.0	m	swalp 0.1e−6 m
Vpr	0.67876e1	V	vpr 0.25 V
Gamoor	0.29702 e−4		gamoor 1.1e−3
Slgamoo	0.0	m ²	slgamoo 10e−15 m ²
Etagamr	2.0		x
Mor	0.44		mor 0.3
Stmo	0.0	1/K	stmo 0.01 1/K
Slmo	0.0	√m	slmo 1.4e−3 √m
Etamr	2.0		x
Zet1r	2.0153		zet1r 0.7
Etazet	0.0		etazet 0.5
Slzet1	0.0	m ^(Etazet)	slzet1 0.14e−6 m ^(etazet)
Vsbtr	0.61268e1	V	vsbtr 99 V
Slvsbt	0.0	m×V	slvsbt 10e−6 m×V
A1r	0.20348e2		a1r 22
Sta1	0.0	1/K	sta1 0.1 1/K
Sla1	0.0	m	Sla1 10e−6 m
Swa1	0.0	m	swa1 0.1e−3 m
A2r	0.33932e2	V	a2r 33 V
Sla2	0.0	m×V	sla2 10e−6 m×V
Swa2	0.0	m×V	swa2 0.1e−3 m×V
A3r	0.10078e1		a3r 0.6
Sla3	0.0	m	sla3 1e−6 m
Swa3	0.0	m	swa3 10e−6 m
Tox	1e−6	m	tox 20e−9 m
Col	0.0	F/m	col 50e−12 F/m
Ntr	0.0	J	ntr 21e−21 J
Nfr	0.0	V ²	nfr 16e−12 V ²
Nfar	7.15e22	1/(V×m)	-
Nfbr	2.16e7	1/(V×m ² )	-
Nfcr	0.0	1/V	-
Vr	0.0	V	-
Jsgbr	1e−14	A/m ²	-
Jsdbr	1e−14	A/m ²	-
Jsgsr	1e−14	A/m	-
Jsdsr	1e−14	A/m	-
Jsggr	1e−14	A/m	-
Jsdgr	1e−14	A/m	-
Cjbr	0.0	F/m ²	-
Cjsr	0.0	F/m	-
Cjgr	0.0	F/m	-
Vdbr	0.8	V	-
Vdsr	0.8	V	-
Vdgr	0.8	V	-
Pb	0.5		-
Ps	0.5		-
Pg	0.5		-
Nb	1.0		-
Ns	1.0		-
Ng	1.0		-
Tnom		°C	tnom set by option °C
-			dta 0.0 K
Trise	0.0	°C	trise 0.0 K

GaAsFET and JFET Models for SPICE

The following information describes how the various GaAsFET models from SPICE are translated to the corresponding ADS models.

All GaAsFET devices in SPICE reference a model by its instance name. GaAsFET models in SPICE have a keyword

NMF | PMF for Spice3,
GASFET for PSpice and
NJF | PJF for HSpice.

PSpice and HSpice also use a Level parameter to help identify the appropriate model to select. ADS uses the Idsmod parameter to identify the model to use. The SPICE Level is used by the Netlist Translator to determine what value to set for Idsmod and which model to place. Both the Level and Idsmod parameters are listed where available.

Spice3 MESFET Mapping Table displays Spice3 MESFET device and model information and the corresponding device and model information for schematics and netlists in ADS.

Spice3 MESFET Mapping Table
Format	Device	Model	ADS Idsmod
Spice3 Netlist	Zxxxxxxx	NMF \| PMF	-
ADS Schematic	GaAsFET	[Statz_Model:Statz (Raytheon) GaAsFET Model\|Statz Model-Statz (Raytheon) GaAsFET Model#1143871]]	Idsmod = 3
ADS Netlist	-	GaAs	Idsmod = 3

PSpice GaAsFET Mapping Table displays the initial and translated devices, models and Idsmod values for each of the individual formats listed for the PSpice GaAsFET. PSpice level parameter values are also listed.

PSpice GaAsFET Mapping Table
PSpice Level	Format	Device	Model	ADS Idsmod
All	PSpice Netlist	Bxxxxxxx	GASFET	-
Level = 1	ADS Schematic	GaAsFET	[Advanced_Curtice2_Model:Advanced Curtice-Quadratic GaAsFET\|Advanced Curtice2 Model-Advanced Curtice-Quadratic GaAsFET#1143569]]	Idsmod =1
Level = 1	ADS Netlist	-	GaAs	Idsmod =1
Level = 2	ADS Schematic	GaAsFET	[Statz_Model:Statz (Raytheon) GaAsFET Model\|Statz Model-Statz (Raytheon) GaAsFET Model#1143871]]	Idsmod = 3
Level = 2	ADS Netlist	-	GaAs	Idsmod = 3
Level = 3	ADS Schematic	TOM	[TOM_Model:Triquint Scalable Nonlinear GaAsFET Model\|TOM Model-Triquint Scalable Nonlinear GaAsFET Model#1144228]]	Idsmod = 7
Level = 3	ADS Netlist	-	GaAs	Idsmod = 7
Level = 4	Not translated.
Level = 5	Not translated.

HSpice JFET & GaAsFET Mapping Table displays the device, model and Idsmod (where used) for each of the individual formats listed for the HSpice JFET and GaASFET. The HSpice level parameters and SAT parameters are also listed where appropriate.

HSpice JFET & GaAsFET Mapping Table
HSpice Level	Format	Device	Model	ADS Idsmod
All	HSpice Netlist	Jxxxxxxx	NJF \| PJF	-
Level = 1	ADS Schematic	JFET_NFET or JFET_PFET	[JFET_Model:Junction Field Effect Transistor Model\|JFET Model-Junction Field Effect Transistor Model#1144500]]	-
Level = 1	ADS Netlist	-	JFET	-
Level = 2	Not translated.
Level = 3 SAT = 0	ADS Schematic	GaAsFET	[Advanced_Curtice2_Model:Advanced Curtice-Quadratic GaAsFET\|Advanced Curtice2 Model-Advanced Curtice-Quadratic GaAsFET#1143569]]	Idsmod =1
Level = 3 SAT = 0	ADS Netlist	-	GaAs	Idsmod =1
Level = 3 SAT = 2	ADS Schematic	GaAsFET	[Statz_Model:Statz \(Raytheon) GaAsFET Model\|Statz Model-Statz (Raytheon) GaAsFET Model#1143871]]	Idsmod = 3
Level = 3 SAT = 2	ADS Netlist	-	GaAs	Idsmod = 3
Level = 3 SAT = 1,3	Not translated.

Note
HSpice uses the additional SAT (saturation factor) parameter to determine the appropriate model. The combination of the Level and SAT parameters determine the model used.